Molecular beam epitaxy of ZnxBe1-xSe: Influence of the substrate nature and epilayer properties

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 883-886

  Chauvet, C ^a   Tournie E ^a   Vennegues P ^a   Faurie, J P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ENERGY GAP; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; ZINC ALLOYS;

LATTICE MATCHING; ZINC BERYLLIUM SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033716454     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0243-9     Document Type: Article

References (14)

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