Theoretical analysis of the threshold current density in BeMgZnSe quantum-well ultraviolet lasers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 12, 2001, Pages 6872-6873

  Maruyama, Takeo ^a   Nakamura, Naoto ^a   Watanabe, Masahiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Be chalcogenide; Quantum well laser; Threshold current density; Ultraviolet laser; Wide bandgap materials

Indexed keywords

BERYLLIUM COMPOUNDS; CALCULATIONS; CURRENT DENSITY; ENERGY GAP; HETEROJUNCTIONS; LATTICE CONSTANTS; MATHEMATICAL MODELS; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

BERYLLIUM-CHALCOGENIDE; DENSITY-MATRIX THEORY; DISPERSION ENERGY; OSCILLATION ENERGY; QUANTUM WELL ULTRAVIOLET LASER; THRESHOLD CURRENT DENSITY; WIDE-BANDGAP MATERIALS;

QUANTUM WELL LASERS;

EID: 0035710074     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6872     Document Type: Article

References (13)