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Volumn 72, Issue 22, 1998, Pages 2859-2861

Molecular-beam epitaxy of BeTe layers on GaAs substrates studied via reflection high-energy electron diffraction

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000821521     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121482     Document Type: Article
Times cited : (16)

References (16)
  • 7
    • 0002216319 scopus 로고
    • in edited by B. Gil and R.-L. Aulombard World Scientific, Singapore
    • C. Vèrié, in Semiconductor Heteroepitaxy, edited by B. Gil and R.-L. Aulombard (World Scientific, Singapore, 1995), p. 73.
    • (1995) Semiconductor Heteroepitaxy , pp. 73
    • Vèrié, C.1
  • 12
    • 21544438108 scopus 로고    scopus 로고
    • Through this article, RHEED observation along one azimuth means that the electron beam is parallel to this aximuth
    • Through this article, RHEED observation along one azimuth means that the electron beam is parallel to this aximuth.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.