Enhanced field emission from nitrogen-doped amorphous diamond

Journal of Materials Research

Volumn 18, Issue 7, 2003, Pages 1594-1599

  Kan, Ming Chi ^a   Huang, Jow Lay ^a   Sung, James C ^b,c   Chen, Kuei Hsien ^d   Lii, Ding Fwu ^e  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KINIK Company   (Taiwan)

^c NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^d ACADEMIA SINICA   (Taiwan)

^e CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; DEPOSITION; DOPING (ADDITIVES); ELECTRON EMISSION; ELECTRON SPECTROSCOPY; FIELD EMISSION CATHODES; HALL EFFECT; NITROGEN; RAMAN SPECTROSCOPY; STRUCTURE (COMPOSITION);

AMORPHOUS DIAMOND; AMORPHOUS STRUCTURE; ENHANCED FIELD EMISSION; RESISTIVITY CURVE;

DIAMONDS;

EID: 0042701859     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2003.0219     Document Type: Article

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