Nitrogen doping of tetrahedral amorphous carbon

Diamond and Related Materials

Volumn 4, Issue 4, 1995, Pages 441-444

  Robertson, J ^a   Davis, C A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Amorphous carbon; Bonding; Doping n type; Nitrogen

Indexed keywords

EID: 21544466766     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(94)05265-4     Document Type: Article

References (23)

1. Electronic density of states in highly tetrahedral amorphous carbon
2. Nitrogen doping of highly tetrahedral amorphous carbon
3. Substitutional nitrogen doping of tetrahedral amorphous carbon
4. Photoelectron-spectroscopy study of amorphous a-CNx:H
5. Symmetry breaking in nitrogen-doped amorphous carbon: Infrared observation of the Raman-active G and D bands
6. Structural properties and electronic structure of low-compressibility materials: β-Si3N4 and hypothetical β-C3N4
7. Electronic structure of amorphous semiconductors
8. Defects and hydrogen in amorphous silicon nitride
9. Doping and the Fermi Energy in Amorphous Silicon