Dbie shape and hardness dependence on gate oxide breakdown location in mosfet channel

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 584-585

  Pey, K L ^a   Tung, C H ^b   Radhakrishnan, M K ^c   Tang, L J ^b   Lin, W H ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c PHILIPS RESEARCH LABORATORIES   (Germany)

^d CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Dielectric breakdown induced epitaxy (DBIE); Gate oxide; Hard breakdown; Soft breakdown

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRODES; EPITAXIAL GROWTH; GATES (TRANSISTOR); HARDNESS; LOCATION; RECONFIGURABLE HARDWARE;

ACCUMULATION MODES; DIELECTRIC-BREAKDOWN-INDUCED EPITAXY; EFFECTIVE RESISTANCES; GATE OXIDE; GATE OXIDE BREAKDOWN; HARD BREAKDOWN; SOFT BREAKDOWN; TRANSISTOR CHANNELS;

MOSFET DEVICES;

EID: 84955256910     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197817     Document Type: Conference Paper

References (8)

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