Gate dielectric breakdown induced microstructural damages in MOSFETs

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn 2003-January, Issue , 2003, Pages 134-140

  Tang, L J ^a   Pey, K L ^b   Tung, C H ^a   Radhakrishnan, M K ^c   Lin, W H ^d  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c PHILIPS RESEARCH LABORATORIES   (Germany)

^d 60 Woodlands Industrial Park   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; FAILURE ANALYSIS; GATE DIELECTRICS; GATES (TRANSISTOR); INTEGRATED CIRCUITS; POLYCRYSTALLINE MATERIALS; SILICIDES; SILICON;

CATASTROPHIC FAILURES; DEGREE OF DAMAGES; FAILURE MECHANISM; HIGH-RESOLUTION TEM; MICRO-STRUCTURAL DAMAGES; PHYSICAL ANALYSIS; SOURCE/DRAIN REGIONS; ULTRA THIN GATE OXIDE;

MOSFET DEVICES;

EID: 84942424590     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2003.1222753     Document Type: Conference Paper

References (9)

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