Dielectric breakdown induced epitaxy in ultrathin gate oxide - A reliability concern

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 163-166

  Pey, K L ^a   Tung, C H ^b   Radhakrishnan, M K ^c   Tang, L J ^b   Lin, W H ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c PHILIPS RESEARCH LABORATORIES   (Germany)

^d CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; OXIDES; STRESS ANALYSIS; ULTRATHIN FILMS;

ULTRATHIN GATE OXIDE;

GATES (TRANSISTOR);

EID: 0036923247     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. C H Tung, KL Pey, W H Lin and M K Radhakrishnan, IEEE Electron Device Letters, vol. 23, pp. 526-528, 2002.
2. M.K. Radhakrishnan, K.L Pey, C.H. Tung, W.H. Lin and S.H. Ong, IEDM Tech. Digest 2001, pp. 857-860.
3. K.L. Pey, C.H. Tung, W.H. Lin and M.K Radhakrishnan, Proc. IRPS 2002, pp. 210-215.
4. R. Degraeve et al., IEEE Transaction on Electron Device Letters, vol. 45, pp. 904-911, 1998.
5. S. Lombardo et al., Journal of Applied Physics, vol. 84(1), pp. 472-479, 1998.
6. R. Degraeve et al., IEDM Tech. Digest 2001, pp. 121-124.
7. D.A. Muller et al., Nature, vol. 399, pp. 758-761, 1999.