Low resistivity C54 phase TiSi2 films synthesized by a novel two-step method

Chinese Physics Letters

Volumn 20, Issue 8, 2003, Pages 1329-1332

  Li, Dan Feng ^a,b   Gu, Chang Zhi ^a   Guo, Cal Xin ^a,b   Yue, Shuang Lin ^a   Hu, Chang Wen ^b,c  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b NORTHEAST NORMAL UNIVERSITY   (China)

^c BEIJING INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SURFACE REACTIONS; SURFACE ROUGHNESS;

GROWTH PROPERTIES; LOW RESISTIVITY; LOW SUBSTRATE TEMPERATURE; RAPID THERMAL ANNEALING PROCESS; RESISTIVITY MEASUREMENT; SELECTIVE WET ETCHING; SI (001) SUBSTRATE; SPUTTERING TECHNOLOGY; SYNTHESISED; TWO STEP METHOD;

X RAY DIFFRACTION;

EID: 0042525751     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/8/343     Document Type: Article

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