Dependence of 1.54 μm photoluminescence on excess-Si degrees of Er-doped Si-rich SiO2 films deposited by magnetron sputtering

Chinese Physics Letters

Volumn 18, Issue 7, 2001, Pages 986-988

  Ran, Guang Zhao ^a   Chen, Yuan ^a   Ma, Zhen Chang ^b   Zong, Wan Hua ^b   Xie, Li Qing ^c   Guo, Chun Gang ^c   Qin, Guo Gang ^a,d  

^a PEKING UNIVERSITY   (China)

^b HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

^c BEIJING NORMAL UNIVERSITY   (China)

^d INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE FILMS; ERBIUM; ERBIUM COMPOUNDS; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SILICON;

ANNEALING TEMPERATURES; ER-DOPED; EXCESS SI; LUMINESCENCE INTENSITY; MAGNETRON-SPUTTERING; SI CONTENT; SPUTTERING TECHNIQUES;

SILICA;

EID: 0035588309     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/7/347     Document Type: Article

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