Influence of TiSi2 formation temperature on film thermal stability

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 159-164

  Sabbadini, A ^a   Cazzaniga, F ^a   Marangon, T ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE MEASUREMENT; GRANULAR MATERIALS; HIGH TEMPERATURE EFFECTS; PYROLYSIS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SUBSTRATES; THERMODYNAMIC STABILITY; THIN FILMS; TITANIUM COMPOUNDS;

POLYSILICON; SHEET RESISTANCE; TITANIUM DISILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033640113     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00277-4     Document Type: Article

References (6)

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2. 2 on narrow poly-Si lines. Microelectr. Eng. 14:1991;327.
3. Hong Q., Hong S., D'Heurle F., Harper J. Thermal stability of silicide on polycrystalline Si. Thin Solid Films. 253:1994;479.
4. Maex K. Self-aligned silicidation for sub half-micron technologies. Conference Proceedings ULSI-X 1995 MRS. 1995.
5. 2 formation in confined areas. Solid State Commun. 109:1999;141-143.
6. 2 formation on narrow polycrystalline silicon lines using Raman spectroscopy. IEEE Electr. Dev. Lett. 19:1998;171-173.