Cause of aligned-orientation growth of titanium silicide in plasma enhanced chemical vapor deposition

Journal of the Electrochemical Society

Volumn 143, Issue 11, 1996, Pages 3778-3784

  Saito, Kunio ^a,b   Arita, Yoshinobu ^a  

^a NTT CORPORATION   (Japan)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; DECOMPOSITION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; GRAIN GROWTH; PLASMA APPLICATIONS; STOICHIOMETRY;

ALIGNED ORIENTATION GROWTH; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); TITANIUM SILICIDE;

TITANIUM COMPOUNDS;

EID: 0030284313     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837289     Document Type: Article

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