TiSi2/Si interface instability in plasma-assisted chemical vapor deposition of titanium

Journal of Crystal Growth

Volumn 193, Issue 3, 1998, Pages 322-327

  Ohshita, Y ^a   Oshida, M ^a   Seki, M ^a   Watanabe, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL VAPOR DEPOSITION; CHLORINE; DESORPTION; ETCHING; HYDROGEN; MORPHOLOGY; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE ROUGHNESS; TITANIUM; TITANIUM COMPOUNDS;

PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; TITANIUM DISILICIDE;

HETEROJUNCTIONS;

EID: 0032184425     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00490-4     Document Type: Article

References (4)

1. M.S. Ameen, J.T. Hillman, J. Faguet, R.F. Foster, C. Arena, F. Martin, in: R. Blulmenthal, G. Janssen (Eds.), Advanced Metallization for ULSI Applications in 1994, Mater. Res. Proc., Pittsburg, PA, 1995, p. 269.
2. T. Akahori, T. Murakami, Y. Morioka, in: VMIC'93, VLSI Multilevel Interconnection Conf., 1993, p. 405.
3. T.P. Nolan, R. Sinclair, J. Appl. Phys. 71 (1992) 720.
4. Y. Ohshita, K. Watanabe, Proc. 4th Int. Conf. and EURO-CVD-11, Electrochemical Society Proceeding, vol. 97-25, 1997, p. 171.