Ion-bombardment artifact in TOF-SIMS analysis of ZrO 2 /SiO 2 /Si stacks

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 523-526

  De Witte, H ^a,b,c   Conard, T ^a,b   Vandervorst, W ^a,b   Gijbels, R ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c ASM BELGIUM   (Belgium)

Author keywords

Artifacts; ARXPS; Depth profiling; High k dielectric; TOF SIMS

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; DIFFUSION; INTERFACES (MATERIALS); MOS DEVICES; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

DEPTH PROFILING;

ULTRATHIN FILMS;

EID: 0037437873     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00728-6     Document Type: Conference Paper

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