Outlook of MOS devices into next century

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 7-14

  Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LSI CIRCUITS; SEMICONDUCTING SILICON;

CRITICAL DIMENSION (CD);

MOSFET DEVICES;

EID: 0033190136     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00328-7     Document Type: Review

References (8)

1. D. Kahng et al, IRE Solid-StateDev. Res. Conf., (1960).
2. G. E. Moore, IEDM Tech. Dig., p. 11, December, (1975)
3. Semiconductor Industry Association, 'The National Technology Roadmap for Semiconductors,' (1997)
4. Semiconductor Industry Association, 'The International Technology Roadmap for Semiconductors: (1998)
5. R. H. Dennard et al., IEEE J. Solid-State Circuits, SC-9, p.256 (1974)
6. H. Iwai, IEEE J. Solid-State Circuits, vol.34, p.357 (1999)
7. M. Ono et al., IEDM Tech. Dig., p. 119, (1993).
8. H. S. Momose et al., IEDM Tech. p. 593 (1994)