Wide bandgap semiconductor power electronics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 51-54

  Weitzel, Charles E ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

JUNCTION GATE FIELD EFFECT TRANSISTORS; MESFET DEVICES; MOSFET DEVICES; NITRIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

GALLIUM NITRIDE; WIDE BANDGAP SEMICONDUCTORS;

POWER ELECTRONICS;

EID: 0032266784     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)