Interface control of Bi4Ti3O12 film growth on Si(100) by use of an ultrathin silicon oxynitride buffer layer

Applied Physics Letters

Volumn 79, Issue 12, 2001, Pages 1858-1860

  Rokuta, E ^a   Choi, J H ^a   Hotta, Y ^a   Tabata, H ^a   Kobayashi, H ^a   Kawai, T ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035903378     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1400078     Document Type: Article

References (21)

1. B. Aurivillius, Ark. Kemi 1, 499 (1949).
2. A. Fouskova and L. E. Cross, J. Appl. Phys. 41, 2834 (1970).
3. T. Takenaka and K. Sakata, J. Appl. Phys. 55, 1092 (1984).
4. S. B. Krupanidhi, N. Maffei, D. Roy, and C. J. Peng, J. Vac. Sci. Technol. A 10, 1815 (1992).
5. H. Nagata, N. Chikushi, and T. Takenaka, Jpn. J. Appl. Phys.. Part 1 38, 5497 (1999).
6. Y. Noguchi and M. Miyayama, Appl. Phys. Lett. 78, 1903 (2001).
7. H. Buhay, S. Sinharoy, W. H. Kansner, M. H. Francombe, D. R. Lampe, and E. Stepke, Appl. Phys. Lett. 58, 1470 (1991).
8. N. Maffei and S. B. Krupanihidhi, Appl. Phys. Lett. 60, 781 (1992).
9. W. Y. Wu, J. Appl. Phys. 50, 4314 (1979).
10. L. Fu, K. Liu, B. Zhang, J. Chu, H. Wang, and M. Wang, Appl. Phys. Lett. 72, 1784 (1998).
11. E. Rokuta, Y. Hotta, T. Kubota, H. Tabata, H. Kobayashi, and T. Kawai, Appl. Phys. Lett. 79, 403 (2001).
12. T. Mizokuro, K. Yoneda, Y. Todokoro, and H. Kobayashi, J. Appl. Phys. 85, 2921 (1999).
13. M. P. Seah and D. Brigs, Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy (Wiley, Chichester, 1983).
14. S. M. Sze. Physics of Semiconductor Devices (Wiley, New York, 1981), p. 375.
15. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982), pp. 325-328.
16. A. Getzberger, Bell Syst. Tech. J. 45, 1097 (1966).
17. H. Kobayashi, T. Kubota, H. Kawa, Y. Nakato, and M. Nishiyama, Appl. Phys. Lett. 73, 933 (1998).
18. G. Faraci, S. L. Rosa, A. R. Pennisi, and G. Margaritondo, Phys. Rev. B 49, 2943 (1994).
19. H. Kobayashi, T. Yuasa, K. Yamanaka, K. Yoneda, and Y. Todokoro, J.. Chem. Phys. 109, 4997 (1998).
20. H. S. Shulman, M. Testorf, D. Damajanovic, and N. Setter, J. Am. Ceram. Soc. 79, 3124 (1996).
21. I. Koiwa, T. Kanehira, H. Kato, S. Ono, A. Sakakibara, T. Osaka, and K. Asami, Jpn. J. Appl. Phys., Part 1 37, 5192 (1998).