High performance submicrometer CMOS with metal induced lateral crystallization of amorphous silicon

Journal of the Electrochemical Society

Volumn 150, Issue 8, 2003, Pages

  Joshi, Amol R ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DOPANT ACTIVATION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; METAL INDUCED LATERAL CRYSTALLIZATION;

AMORPHOUS SILICON;

EID: 0041707809     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1586302     Document Type: Article

References (22)

1. V. Subramanian and K. C. Saraswat, in 55th Device Research Conference Digest, IEEE Electron Devices Society, p. 54 (1997).
2. V. Subramanian and K. C. Saraswat, in Technical Digest for VLSI Symposium, 1997, p. 97.
3. S. W. Lee and S. K. Joo, IEEE Electron Device Lett., 17, 160 (1996).
4. H. Kim, J. G. Couillard, and D. G. Ast, Appl. Phys. Lett., 72, 803 (1998).
5. G. A. Bhat, Z. H. Jin, H. S. Kwok, and M. Wong, in 56th Device Research Conference Digest, IEEE Electron Devices Society, p. 110 (1998).
6. C. Hayzelden and J. L. Batstone, J. Appl. Phys., 73, 8279 (1993).
7. G. Liu and S. J. Fonash, Appl. Phys. Lett., 62, 2554 (1993).
8. J. K. Park, S. H. Kim, W. S. Shon, S. J. Park, J. Jang, S. Y. Yoon, and C. O. Kim, in Thin Film Transistor Technologies IV, Y. Cuo, Editor, PV 98-22, p. 84 The Electrochemical Society Proceedings Series, Pennington, NJ (1998).
9. A. R. Joshi and K. C. Saraswat, in ULSI Process Integration, C. L. Claeys, H. Iwai, G. Bronner, and R. Fair, Editors PV 99-18 p. 361. The Electrochemical Society Proceedings Series, Pennington, NJ (1999).
10. S. J. Souri, K. Banerjee, A. Mehrotra, and K. C. Saraswat, in 37th Design Automation Conference Proceedings, ACM/SiGDA, IEEE Circuits and Systems Society, EDA Consortium, p. 213 (2000).
11. International Technology Roadmap for Semiconductors, http://public.itrs.net, International SEMATECH (2001).
12. S. W. Lee, T. H. Ihn, and S. K. Joo, Appl. Phys. Lett., 69, 380 (1996).
13. T. H. Ihn, J. W. Shin, B. I. Lee, and S. K. Joo, Journal of the Korean Institute of Telematics and Electronics, 34D, 45 (1997).
14. H. J. Cho, P. B. Griffin, and J. D. Plummer, Abstract Z2.18, the 1997 MRS Spring Meeting, Materials Research Society (April 1997).
15. S. M. Sze, Physics of Semiconductor Devices, p. 71, John Wiley & Sons, New York (1981).
16. J. Gu, S. Y. Chou, N. Yao, H. Zandbergen, and J. K. Farrer, Abstract A22.4, the 2002 MRS Spring Meeting, (April 2002).
17. T. Ghani, S. Ahmed, P. Aminzade, J. Bielefeld, P. Charvat, C. Chu, M. Harper, P. Jacob, C. Jan, J. Kavalieros, C. Kenyon, R. Nagisetty, P. Packan, J. Sebastian, M. Taylor, J. Tsai, S. Tyagi, S. Yang, and M. Bohr, Tech. Dig. - Int. Electron Devices Meet., 1999, 415.
18. V. Subramanian, M. Toita, N. R. Ibrahim, S. J. Souri, and K. C. Saraswat, IEEE Electron Device Lett., 20, 341 (1999).
19. K. Nakazawa, J. Appl. Phys., 69, 1703 (1991).
20. A. R. Joshi and K. C. Saraswat, in 60th Device Research Conference Digest, IEEE Electron Devices Society, p. 61 (2002).
21. K. R. Olasupo and M. K. Hatalis, IEEE Trans. Electron Devices, 43, 1218 (1996).
22. H. Wang, M. Chan, S. Jagar, V. M. C. Poon, M. Qin, Y. Wang, and P. K. Ko, IEEE Trans. Electron Devices, 47, 1580 (2000).