Reactive etching of semiconductor surfaces using an electronically chopped low energy broad beam ion source

Surface and Coatings Technology

Volumn 174-175, Issue , 2003, Pages 157-161

  Dienelt, J ^a   Zimmer, K ^a   Neumann, H ^a  

^a Leibniz InstOberfachenmodifizierung   (Germany)

Author keywords

Beam switch; Chemical etching; Gallium arsenide; Pulsed ion beam; Sputtering

Indexed keywords

CHOPPERS (CIRCUITS); ELECTRON CYCLOTRON RESONANCE; FREQUENCIES; ION BEAMS; SEMICONDUCTING GALLIUM ARSENIDE;

TUNEABLE ELECTRONIC CHOPPERS;

REACTIVE ION ETCHING;

COATING; INDUSTRIAL APPLICATION; PLASMA; SURFACE PROPERTY;

EID: 0041375467     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(03)00599-1     Document Type: Article

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