Chemically assisted ion beam etching of GaAs/AlGaAs using chlorine ions

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 7 SUPPL. B, 1996, Pages

  Kawanishi, Hidenori ^a   Morioka, Tatsuya ^a   Shimonaka, Atsushi ^a   Taneya, Mototaka ^a   Suzuki, Akira ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

Al2O3; Argon; Chemically assisted ion beam etching; Chlorine; GaAs AlGaAs

Indexed keywords

ALUMINA; ARGON; CHLORINE; ELECTRON ENERGY LEVELS; ETCHING; ION BEAMS; MASKS; POROUS MATERIALS; SURFACE TREATMENT;

ALUMINUM GALLIUM ARSENIDE; CHEMICALLY ASSISTED ION BEAM ETCHING; CHLORINE IONS; ION ENERGY; MICROMASKS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4243089743     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l880     Document Type: Article

References (10)

1. N. Bouadma, J. Riou and A. Kampfer: Electron. Lett. 21 (1985) 566.
2. S. Semura, T. Ohta, T. Kuroda and H. Nakashima: Jpn. J. Appl. Phys. 24 (1985) L463.
3. K. Asakawa and S. Sugata: J. Vac. Sci. & Technol. B3 (1985) 402.
4. P. Vettiger, M. K. Benedict, G. L. Bona, P. Buchmann, E. C. Cahoon, K. Dätwyler, H. P. Dietrich, A. Moser, H. K. Seitz, O. Voegeli, D. J. Webb and P. Wolf: IEEE J. Quantum Electron. QE-27 (1991) 1319.
5. P. Tihanyi, D. K. Wagner, A. J. Roza, H. J. Vollmer, C. M. Harding, R. J. Davis and E. D. Wolf: Appl. Phys. Lett. 50 (1987) 1640.
6. G. A. Lincoln, M. W. Geis, S. Pang and N. Efremow: J. Vac. Sci. & Technol. B1 (1983) 1043.
7. G. A. Lincoln, M. W. Geis, L. J. Mahoney, A. Chu, B. A. Vojak, K. B. Nichols, W. J. Piacentini, N. Efremow and W. T. Lindley: J. Vac. Sci. & Technol. 20 (1982) 786.
8. Y. Todokoro: Electron. Lett. 18 (1982) 543.
9. A. Behfar-Rad, S. S. Wong, R. J. Davis and E. D. Wolf: J. Electrochem. Soc. 136 (1989) 779.
10. For example, H. Namatsu, Y. Ozaki and K. Hirata: J. Electrochem. Soc. 130 (1983) 523.