Stress release of PECVD oxide by RTA

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5116 II, Issue , 2003, Pages 596-606

  Charavel, Rémy ^a   Olbrechts, Benoit ^a   Raskin, Jean Pierre ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Etch rate; PECVD oxide; RTA; Stress release

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPRESSIVE STRESS; ETCHING; NITROGEN OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; REFRACTIVE INDEX; RESIDUAL STRESSES; SILANES; SILICON WAFERS; SURFACE ROUGHNESS; THICK FILMS;

ETCH RATE; OXIDE FILMS; STRESS RELEASE;

MICROELECTROMECHANICAL DEVICES;

EID: 0041327926     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.498098     Document Type: Conference Paper

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