Accurate determination of composition and bonding probabilities in plasma enhanced chemical vapour deposition amorphous silicon oxide

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 609-612

  Moreno, J A ^a   Garrido, B ^a   Samitier, J ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL MICROSTRUCTURE; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; INFRARED RADIATION; LIGHT ABSORPTION; LIGHT REFLECTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; STOICHIOMETRY;

GAS FLOW RATIO;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033743147     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00279-6     Document Type: Article

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