Role of the gas temperature and power to gas flow ratio on powder formation and properties of films grown by the PECVD technique

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 272-277

  Martins, R ^a   Silva, V ^a   Ferreira, I ^a   Domingues, A ^a   Fortunato, E ^a  

^a Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; FILM GROWTH; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PROBABILITY; THERMAL EFFECTS;

PLASMA REACTANCE; PLASMA RESISTANCE; SILANE PLASMAS; URBACH ENERGY;

AMORPHOUS FILMS;

EID: 0033895960     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00307-4     Document Type: Article

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