Hydrogen incorporation in dual-mode PECVD amorphous silicon oxide thin films

Surface and Coatings Technology

Volumn 80, Issue 1-2, 1996, Pages 8-12

  Etemadi, R ^a   Godet, C ^a   Perrin, J ^a   Bouree J E ^a   Drevillon B ^a   Clerc, C ^b  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b Orsay Campus   (France)

Author keywords

Amorphous films; Dual mode PECVD; Hydrogen content; Silicon oxide

Indexed keywords

ABSORPTION; AMORPHOUS FILMS; ANNEALING; BONDING; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; HYDROGEN; INFRARED SPECTROSCOPY; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; STOICHIOMETRY;

ABSORPTION BAND; ATOMIC CONCENTRATION; BENDING MODE; ELASTIC RECOIL DETECTION ANALYSIS; HYDROGEN CONTENT; INTEGRATED ABSORBANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTITATIVE ANALYSIS; STRETCHING MODES;

THIN FILMS;

EID: 0030107686     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/0257-8972(95)02677-0     Document Type: Article

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