Chemical interactions in noncontact AFM on semiconductor surfaces: Si(111), Si(100) and GaAs(110)

Applied Surface Science

Volumn 140, Issue 3-4, 1999, Pages 320-326

  Pérez, Rubén ^a   Štich, Ivan ^b   Payne, Michael C ^c   Terakura, Kiyoyuki ^d  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

61.16.Ch; 71.15.Hx; APN; Atomic force microscopy (AFM); Atomic resolution; Force gradients; GaAs(110); GD; Noncontact; SF; Si(100); Si(111); Total energy pseudopotential calculations

Indexed keywords

EID: 0040707078     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00548-0     Document Type: Article

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