Transition from `dome' to `pyramid' shape of self-assembled GeSi islands

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 302-305

  Vostokov, N V ^a   Dolgov, I V ^a   Drozdov, Yu N ^a   Krasil'Nik, Z F ^a   Lobanov, D N ^a   Moldavskaya, L D ^a   Novikov, A V ^a   Postnikov, V V ^a   Filatov, D O ^b  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DISSOLUTION; RAMAN SCATTERING; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON WAFERS; X RAY CRYSTALLOGRAPHY;

SELF-ASSEMBLED ISLANDS;

SEMICONDUCTING FILMS;

EID: 0034140256     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00559-X     Document Type: Article

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