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Volumn 102, Issue , 1996, Pages 293-297

Influence of growth conditions on the formation of deep photoluminescence bands in MBE-grown Si layers and SiGe/Si quantum structures

(6) Buyanova, I A a Chen, W M a Henry, A a Ni, W X a Hansson, G V a Monemar, B a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CYCLOTRON RESONANCE; EMISSION SPECTROSCOPY; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GROWTH TEMPERATURE; NONRADIATIVE CHANNELS; PHOTOLUMINESCENCE SPECTROSCOPY; QUANTUM STRUCTURES; VACANCY TYPE COMPLEX DEFECTS;

SEMICONDUCTOR GROWTH;

EID: 0030564810 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00067-0 Document Type: Article

Times cited : (4)

References (12)

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