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Volumn 23, Issue 10, 1997, Pages 746-747

Possible method of reducing annealing temperatures of radiation defects in ion-implanted silicon carbide

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Indexed keywords


EID: 0031497589     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1261786     Document Type: Article
Times cited : (8)

References (13)
  • 1
    • 57649086530 scopus 로고
    • edited by Yu. V. Koritskǐ, V. V. Pasynkov, and B. M. Tareev [in Russian], Énergatomizdat, Leningrad
    • Yu. M. Tairov and V. F. Tsvetkov, in Handbook of Electrical Engineering Materials, Vol. 3, edited by Yu. V. Koritskǐ, V. V. Pasynkov, and B. M. Tareev [in Russian], Énergatomizdat, Leningrad (1988), pp. 446-472.
    • (1988) Handbook of Electrical Engineering Materials , vol.3 , pp. 446-472
    • Tairov, Yu.M.1    Tsvetkov, V.F.2
  • 4
    • 0016935293 scopus 로고
    • V. V. Bolotov, N. B. Pridachin, and L. S. Smimov, Fiz. Tekh. Poluprovodn. 10, 566 (1976) [Sov. Phys. Semicond. 10, 338 (1976)].
    • (1976) Sov. Phys. Semicond. , vol.10 , pp. 338
  • 9
    • 0347040544 scopus 로고
    • A. G. Ital'yantsev, V. N. Mordkovich, and É. M. Temper, Fiz. Tekh. Poluprovodn. 18, 928 (1984) [Sov. Phys. Semicond. 18, 577 (1984)].
    • (1984) Sov. Phys. Semicond. , vol.18 , pp. 577
  • 12
    • 0007298419 scopus 로고
    • Z. B. Dzhibuti and N. D. Dolidze, Pis'ma Zh. Tekh. Fiz. 17(5), 41 (1991) [Sov. Tech. Phys. Lett. 17, 172 (1991)].
    • (1991) Sov. Tech. Phys. Lett. , vol.17 , pp. 172


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.