SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 27, Issue 7, 1998, Pages 833-837

Boron implantation and epitaxial regrowth studies of 6H SiC

(8) Nordell, N a Schoner A a Rottner, K b Persson, P O A c Wahab, Q b Hultman, L c Linnarsson, M K d Olsson, E e

a ACREO AB (Sweden)

b ABB CORPORATE RESEARCH (Sweden)

c LINKÖPING UNIVERSITY (Sweden)

d ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

e UPPSALA UNIVERSITY (Sweden)

Author keywords

Boron; Epitaxy; Ion implantation; Lattice defects; SiC; Transmission electron microscopy (TEM)

Indexed keywords

BORON; DIFFUSION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON CARBIDE; SILICON COMPOUNDS;

ANNEAL TEMPERATURES; BORON IMPLANTATION; DIFFUSION CONSTANT; EPITAXIAL REGROWTH; HIGH-CRYSTALLINE QUALITY; IMPLANTATION DAMAGE; REGROWTH TECHNIQUE; THREADING DISLOCATION;

EPITAXIAL GROWTH;

EID: 0039731168 PISSN: 03615235 EISSN: 1543186X Source Type: Journal
DOI: 10.1007/s11664-998-0105-4 Document Type: Article

Times cited : (5)

References (11)

1
- 0027558366
- M. Bhatnagar and B.J. Baliga, IEEE Trans. Electron Dev. 40, 645 (1993).
- (1993) IEEE Trans. Electron Dev. , vol.40 , pp. 645
- Bhatnagar, M.¹ Baliga, B.J.²

2
- 51249162005
- P.G. Neudeck, J. Electron. Mater. 24, 283 (1995).
- (1995) J. Electron. Mater. , vol.24 , pp. 283
- Neudeck, P.G.¹

3
- 85092384310
- (Columbia, SC: University of South Carolina
- Y.A. Vodakov and E.N. Mokhov, SiC-1973, ed. R.C. Marshall, J.W. Faust, Jr. and C.E. Ryan, (Columbia, SC: University of South Carolina, 1974), p. 508.
- (1974) , pp. 508
- Vodakov, Y.A.¹ Mokhov, E.N.²

4
- 0030246309
- N. Nordell, A. Schöner and S.G. Andersson, J. Electrochem. Soc. 143, 2910 (1996).
- (1996) J. Electrochem. Soc. , vol.143 , pp. 2910
- Nordell, N.¹ Schöner, A.² Andersson, S.G.³

5
- 21544437524
- D.J. Larkin, P.G. Neudek, J.A. Powell and L.G. Lawrence, Appl. Phys. Lett. 65, 1659 (1994).
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1659
- Larkin, D.J.¹ Neudek, P.G.² Powell, J.A.³ Lawrence, L.G.⁴

6
- 0029232973
- R. Rupp, P. Laning, J. Völkl and D. Stephani, J. Cryst. Growth 146, 37 (1995).
- (1995) J. Cryst. Growth , vol.146 , Issue.37
- Rupp, R.¹ Laning, P.² Völkl, J.³ Stephani, D.⁴

7
- 0001519118
- U.K.: Inst. of Physics
- G. Pensl, V.V. Afanasev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H.P. Strunk, M. Maie, and W.J. Choyke, Inst. Phys. Conf. Ser. 142 (Bristol, U.K.: Inst. of Physics, 1996), p. 275.
- (1996) Inst. Phys. Conf. Ser. 142 (Bristol , pp. 275
- Pensl, G.¹ Afanasev, V.V.² Bassler, M.³ Schadt, M.⁴ Troffer, T.⁵ Heindl, J.⁶ Strunk, H.P.⁷ Maie, M.⁸ Choyke, W.J.⁹

8
- 14344277817
- M.V. Rao, P. Griffiths, O.W. Holland, G. Kelner, J.A. Freitas Jr., D.S. Simons, P.H. Chi and M. Ghezzo, J. Appl. Phys. 77, 2479 (1995).
- (1995) J. Appl. Phys. , vol.77 , pp. 2479
- Rao, M.V.¹ Griffiths, P.² Holland, O.W.³ Kelner, G.⁴ Freitas, J.A.⁵ Simons, D.S.⁶ Chi, P.H.⁷ Ghezzo, M.⁸

9
- 85092388066
- Stockholm Aug. 31–Sept. 5
- P.O.Å. Persson, Q. Wahab, L. Hultman, N. Nordell, A. Schöner, K. Rottner, E. Olsson and M.K. Linnarsson, Intl. Conf. of SiC III-Nitrides and Related Materials, Stockholm Aug. 31–Sept. 5, 1997.
- (1997) Intl. Conf. of Sic Iii-Nitrides and Related Materials
- Persson, P.O.Å.¹ Wahab, Q.² Hultman, L.³ Nordell, N.⁴ Schöner, A.⁵ Rottner, K.⁶ Olsson, E.⁷ Linnarsson, M.K.⁸

10
- 0004914997
- A.O. Konstantinov, Sov. Phys. Semicond. 26, 151 (1992).
- (1992) Sov. Phys. Semicond. , vol.26 , pp. 151
- Konstantinov, A.O.¹

11
- 85092362639
- N. Nordell, A. Schöner, M.K. Linnarsson, J. Electron Mater. 26, 187 (1997).
- (1997) J. Electron Mater. , vol.26 , pp. 187
- Nordell, N.¹ Schöner, A.² Linnarsson, M.K.³

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