Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs

Applied Physics Letters

Volumn 79, Issue 9, 2001, Pages 1294-1296

  Chaldyshev, V V ^a   Bert, N A ^a   Musikhin, Yu G ^a   Suvorova, A A ^a   Preobrazhenskii, V V ^b   Putyato, M A ^b   Semyagin, B R ^b   Werner, P ^c   Gosele U ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039567274     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1394166     Document Type: Article

References (22)

1. F. W. Smith, A. R. Calawa, C. L. Chen, M. J. Mantra, and L. J. Mahoney, IEEE Electron Device Lett. 9, 77 (1988).
2. Z. Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. W. Smith, J. Electron. Mater. 22, 1465 (1993).
3. D. D. Nolte, J. Appl. Phys. 85, 6259 (1999).
4. M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B. Y. Tsaur, and A. R. Calawa, Appl. Phys. Lett. 54, 1881 (1989).
5. N. A. Bert, A. I. Veinger, M. D. Vilisova, S. I. Goloshchapov, I. V. Ivonin, S. V. Kozyrev, A. E. Kunitsyn, L. G. Lavrentieva, D. I. Lubyshev, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Tretyakov, V. V. Chaldyshev, and M. P. Yakubenya, Phys. Solid State 35, 1289 (1993).
6. X. Liu, A. Prasad, J. Nishio, E. R. Weber, Z. Liliental-Weber, and W. Walukiewicz, Appl. Phys. Lett. 67, 279 (1995).
7. N. A. Bert, V. V. Chaldyshev, A. E. Kunitsyn, Yu. G. Musikhin, N. N. Faleev, V. V. Tretyakov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Appl. Phys. Lett. 70, 3146 (1997).
8. K. Mahalingam, N. Otsuka, M. R. Melloch, and J. M. Woodall, Appl. Phys. Lett. 60, 3253 (1992).
9. N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Tretyakov, Semiconductors 32, 19 (1998).
10. V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Y. G. Musikhin, V. V. Tret'yakov, and P. Werner, Semiconductors 32, 1036 (1998).
11. N. A. Bert, V. V. Chaldyshev, Y. G. Musikhin, A. A. Suvorova, V. V. Preohrazhenskii, M. A. Putyato, B. R. Semyagin, and P. Werner, Appl. Phys. Lett. 74, 1442 (1999).
12. T. Tan, U. Goesele, and S. Yu, Crit. Rev. Solid State Mater. Sci. 17, 47 (1991).
13. J. Soermer, W. Triftshuser, N. Hozhabri, and K. Alavi, Appl. Phys. Lett. 69, 1867 (1996).
14. I. Lahiri, D. D. Nolte, J. C. P. Chang, J. M. Woodal, and M. R. Melloch, Appl. Phys. Lett. 67, 1244 (1995).
15. J. S. Tsang, C. P. Lee, S. H. Lee, K. L. Tsai, and H. R. Chen, J. Appl. Phys. 77, 4302 (1995).
16. R. Geursen, I. Lahiri, M. Dinu, M. R. Melloch, and D. D. Nolte, Phys. Rev. B 60, 10926 (1999).
17. M. Schultz, U. Egger, R. Scholz, O. Breitenstein, U. Goesele, and T. Tan, J. Appl. Phys. 83, 5295 (1998).
18. M. Luysberg, H. Sohn, A. Prasad, P. Specht, Z. Liliental-Weber, E. R. Weber, J. Gebauer, and R. Krause-Rehberg, J. Appl. Phys. 83, 561 (1998).
19. N. A. Bert, V. V. Chaldyshev, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and P. Werner, Appl. Phys. Lett. 74, 1588 (1999).
20. D. T. J. Hurle, J. Appl. Phys. 85, 6957 (1999).
21. J. C. Bourgoin, K. Khirouni, and M. Stellmacher, Appl. Phys. Lett. 72, 442 (1998).
22. V. V. Chaldyshev, N. A. Bert, Yu. G. Musikhin, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and P. Werner, Semiconducting and Insulating Materials Conference. SIMC-2000, Canberra, Australia, 2000.