Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs

Applied Physics Letters

Volumn 74, Issue 11, 1999, Pages 1588-1590

  Bert, N A ^a   Chaldyshev, V V ^a   Suvorova, A A ^a   Preobrazhenskii, V V ^b   Putyato, M A ^b   Semyagin, B R ^b   Werner, P ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000407370     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123625     Document Type: Article

References (18)

1. F. W. Smith, A. R. Calawa, C. L. Chen, M. J. Manfra, and L. J. Mahoney, IEEE Electron Device Lett. 9, 77 (1988).
2. M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kotright, F. W. Smith, B.-Y. Tsaur, and A. R. Calawa, Appl. Phys. Lett. 54, 1831 (1989).
3. N. A. Bert, A. I. Veinger, M. D. Vilisova, S. I. Goloshchapov, I. V. Ivonin, S. V. Kozyrev, A. E. Kunitsyn, L. G. Lavrent'eva, D. I. Lubyshev, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Tretyakov, V. V. Chaldyshev, and M. P. Yakubenya, Phys. Solid State 35, 1289 (1993).
4. M. R. Melloch, N. Otsuka, J. M. Woodall, A. C. Warren, and J. L. Freeouf, Appl. Phys. Lett. 57, 1531 (1990).
5. S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Wittaker, G. A. Mouron, F. W. Smith, and A. R. Calawa, Appl. Phys. Lett. 59, 3276 (1991).
6. A. C. Warren, J. M. Woodall, J. L. Freeouf, and M. R. Melloch, Appl. Phys. Lett. 57, 1331 (1990).
7. M. R. Melloch, N. Otsuka, K. Mahalingam, C. L. Chang, P. D. Kirchner, J. M. Woodall, and A. C. Warren, Appl. Phys. Lett. 61, 177 (1992).
8. T. M. Cheng, C. Y. Chang, A. Chin, M. F. Huang, and J. H. Huang, Appl. Phys. Lett. 64, 2517 (1994).
9. N. A. Bert, V. V. Chaldyshev, D. I. Lubyshev, V. V. Preobrazhenskii, and B. R. Semyagin, Semiconductors 29, 2232 (1995).
10. V. V. Chaldyshev, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, V. V. Tretyakov, and P. Werner, Semiconductors 32, 1161 (1998).
11. N. A. Bert, V. V. Chaldyshev, N. N. Faleev, A. E. Kunitsyn, D. I. Lubyshev, V. V. Preobrazhenskii, B. R. Semyagin, and V. V. Tretyakov, Semicond. Sci. Technol. 12, 51 (1997).
12. V. V. Chaldyshev, N. A. Bert, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Mater. Sci. Eng., A 238, 148 (1997).
13. N. A. Bert, V. V. Chaldyshev, A. E. Kunitsyn, Yu. G. Musikhin, N. N. Fallev, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Appl. Phys. Lett. 70, 3146 (1997).
14. G. M. Martin, Appl. Phys. Lett. 39, 7747 (1981).
15. N. A. Bert, A. A. Suvorova, V. V. Chaldyshev, Yu. G. Musikhin, V. V. Preobrazhenski, M. A. Putyato, B. R. Semyagin, and P. Werner, Semiconductors 32, 683 (1998).
16. N. A. Bert, V. V. Chaldyshev, Yu. G. Musikhin, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and P. Werner, Appl. Phys. Lett. 003910APL (1999).
17. Z. Liliental-Weber, A. Claverie, J. Washburn, F. Smith, and R. Calawa, Appl. Phys. A: Solids Surf. 53, 141 (1991).
18. N. A. Bert and V. V. Chaldyshev, Semiconductors 30, 988 (1996).