Enhanced arsenic excess in low-temperature grown GaAs due to indium doping

Applied Physics Letters

Volumn 70, Issue 23, 1997, Pages 3146-3148

  Bert, N A ^a   Chaldyshev, V V ^a   Kunitsyn, A E ^a   Musikhin, Yu G ^a   Faleev, N N ^a   Tretyakov, V V ^a   Preobrazhenskii, V V ^b   Putyato, M A ^b   Semyagin, B R ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001538010     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119091     Document Type: Article

References (8)

1. F. W. Smith, A. R. Calawa, C. L. Chen, M. J. Mantra, and L. J. Mahoney, IEEE Electron Device Lett. 9, 77 (1988).
2. M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B. Y. Tsaur, and A. R. Calawa, Appl. Phys. Lett. 54, 1831 (1989).
3. M. R. Melloch, K. Mahalingam, N. Otsuka, J. M. Woodall, and A. C. Warren, J. Cryst. Growth 111, 39 (1991).
4. N. A. Bert, A. I. Veinger, M. D. Vilisova, S. I. Goloshchapov, I. V. Ivonin, S. V. Kozyrev, A. E. Kunitsyn, L. G. Lavrentieva, D. I. Lubyshev, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Tretyakov, V. V. Chaldyshev, and M. P. Yakubenya, Phys. Solid State 35, 1289 (1993).
5. N. A. Bert, V. V. Chaldyshev, S. I. Goloshchapov, S. V. Kozyrev, E. A. Kunitsyn, V. V. Tretyakov, A. I. Veinger, I. V. Ivonin, L. G. Lavrentieva, M. D. Vilisova, M. P. Yakubenya, D. I. Lubyshev, V. V. Preobrazhenskii, and B. R. Semyagin, Mater. Res. Soc. Symp. Proc. 325, 401 (1994).
6. Z. Liliental-Weber, W. Swider, K. M. Yu, J. Kortright, F. W. Smith, and A. R. Calawa, Appl. Phys. Lett. 58, 2153 (1991).
7. R. E. Pritchard, S. A. McQuaid, L. Hart, R. C. Newman, J. Makinen, H. J. von Bardeleben, and M. Missous, J. Appl. Phys. 78, 2411 (1995).
8. X. Liu, A. Prasad, J. Nishio, E. R. Weber, Z. Liliental-Weber, and W. Walukiewicz, Appl. Phys. Lett. 67, 279 (1995).