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Volumn 21, Issue 8, 1998, Pages 1-52

Migration and interaction of point defects at room temperature in crystalline silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0039506151     PISSN: 0393697X     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02874306     Document Type: Article
Times cited : (6)

References (68)
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    • (1994) Handbook on Semiconductors , vol.3 B , pp. 1557-1635
    • Davies, G.1    Newman, R.C.2
  • 5
    • 0002168466 scopus 로고
    • Defects and Radiation Effects in Semiconductors, edited by J. H. ALBANY, IOP Publishing, Bristol
    • WATKINS G. D., TROXELL J. R. and CHATTERJEE A. P., in Defects and Radiation Effects in Semiconductors, edited by J. H. ALBANY, IOP Conf. Ser., No.46 (IOP Publishing, Bristol) 1978, p. 16.
    • (1978) IOP Conf. Ser. , vol.46 , pp. 16
    • Watkins, G.D.1    Troxell, J.R.2    Chatterjee, A.P.3
  • 6
    • 0017631109 scopus 로고
    • Radiation Effects in Semiconductors, edited by N. B. URLI and J. W. CORBETT, IOP Publishing, Bristol
    • KIMERLING L. C., in Radiation Effects in Semiconductors, edited by N. B. URLI and J. W. CORBETT, IOP Conf. Ser. No. 31 (IOP Publishing, Bristol) 1977, p. 221.
    • (1977) IOP Conf. Ser. , vol.31 , pp. 221
    • Kimerling, L.C.1
  • 16
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    • Ph. D. Thesis, Stanford University
    • GRIFFIN P. B., Ph. D. Thesis, Stanford University, 1989.
    • (1989)
    • Griffin, P.B.1
  • 26
    • 20444369477 scopus 로고
    • edited by F. SEITZ and D. TURNBULL, Academic Press, New York
    • ESHELBY J. D., in Solid State Physics, edited by F. SEITZ and D. TURNBULL, Vol. 3 (Academic Press, New York), 1956, pp 79-107.
    • (1956) Solid State Physics , vol.3 , pp. 79-107
    • Eshelby, J.D.1
  • 63
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    • Ph. D. Thesis, Utrecht
    • CACCIATO A., Ph. D. Thesis, Utrecht, 1994.
    • (1994)
    • Cacciato, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.