Anomalous transient diffusion of boron implanted into preamorphized Si during rapid thermal annealing

Applied Physics Letters

Volumn 55, Issue 22, 1989, Pages 2316-2318

  Kim, Y M ^a   Lo, G Q ^a   Kwong, D L ^a   Tseng, H H ^b   Hance, R ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b MOTOROLA INC   (United States)

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EID: 21544463086     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.102048     Document Type: Article

References (10)