SCOPUS 정보 검색 플랫폼

Volumn 47, Issue 9, 1976, Pages 3776-3780

Electron-irradiation-induced divacancy in lightly doped silicon

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS;

SEMICONDUCTING SILICON;

EID: 0016994380 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.323260 Document Type: Article

Times cited : (230)

References (27)

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- (unpublished). See also L. C. Kimerling and J. M. Poate, Lattice Defects in Semiconductors, 1974 (Institute of Physics, London, 1974), 126. In this latter reference Kimerling and Poate reported two levels [formula omitted] and [formula omitted] which they tentatively associated with the A center and the divacancy, respectively.
- Kimerling, L.C.¹

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