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85001714913
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Silicon carbide electronic materials and devices
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An excellent review of the current status in SiC for high power and high temperature electronics, including crystal and thin film growth, processing techniques, and device performance data.
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Capano M, Trew R. Silicon carbide electronic materials and devices. Mater Res Bull. 22:1997;19-56 An excellent review of the current status in SiC for high power and high temperature electronics, including crystal and thin film growth, processing techniques, and device performance data.
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Mater Res Bull
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Capano, M.1
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Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
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Morkoc H, Strite S, Gao G, Lin M, Sverdlov B, Burns M. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies. J Appl Phys. 76:1994;1363-1397.
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3
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36449003431
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Epitaxial growth of 3C-SiC films of 4-in. diam. (100) silicon wafers by atmospheric pressure chemical vapor deposition
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Zorman C, Fleischman A, Dewa A, Mehregany M, Jacob C, Nishino S, Pirouz P. Epitaxial growth of 3C-SiC films of 4-in. diam. (100) silicon wafers by atmospheric pressure chemical vapor deposition. J Appl Phys. 78:1995;5136-5138.
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Deposition of fluorinated a-SiC:H films at room temperature
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Kim D, Lee Y. Deposition of fluorinated a-SiC:H films at room temperature. J Electrochem Soc. 141:1994;3562-3571.
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Preparation of polycrystalline SiC thin films by RF magnetron sputtering using multi-target
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S. Nakashima, Matsunami H. Bristol: Institute of Physics
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Kobayashi J, Yonekubo S, Kamimura K, Onuma Y. Preparation of polycrystalline SiC thin films by RF magnetron sputtering using multi-target. Nakashima S, Matsunami H. Silicon Carbide and Related Materials 1995. 1996;229-232 Institute of Physics, Bristol.
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Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films
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Mehregany M, Tong L, Matus L, Larkin D. Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films. IEEE Trans Elect Dev. 44:1997;74-77.
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IEEE Trans Elect Dev
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Properties of heteroepitaxial 3C-SiC films
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Lundstrum L. Stockholm: Royal Swedish Academy of Engineering Sciences
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Yamaguchi Y, Nagasawa H, Shoki T, Annaka N. Properties of heteroepitaxial 3C-SiC films. Lundstrum L. Technical Digest, 8th International Conference on Solid-State Sensors and Actuators, and Eurosensors IX: 1995 June 25-29; Stockholm, Sweden. 1995;190-193 Royal Swedish Academy of Engineering Sciences, Stockholm.
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Yamaguchi, Y.1
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Stresses in chemical vapor deposited expitaxial 3C-SiC membranes
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Su C, Fokade A, Spencer M, Wyttig M. Stresses in chemical vapor deposited expitaxial 3C-SiC membranes. J Appl Phys. 77:1995;1280-1283.
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Su, C.1
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Elastic and anelastic properties of chemical vapor deposited epitaxial 3C-SiC
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Su C, Wuttig M, Fekade A, Spencer M. Elastic and anelastic properties of chemical vapor deposited epitaxial 3C-SiC. J Appl Phys. 77:1995;5611-5615.
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Su, C.1
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Photoelectrochemical conductivity selective etch stops for SiC
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Shor J, Osgood R, Kurtz A. Photoelectrochemical conductivity selective etch stops for SiC. Appl Phys Lett. 60:1992;1001-1003.
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Dopant-selective etch stops in 6H and 3C-SiC
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This work presents the only feasible means of bulk micromachining SiC.
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Shor J, Kurtz A, Grimberg I, Weiss B, Osgood R. Dopant-selective etch stops in 6H and 3C-SiC. J Appl Phys. 81:1997;1546-1551 This work presents the only feasible means of bulk micromachining SiC.
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Shor, J.1
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Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas
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Yih P, Steckl A. Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas. J Electrochem Soc. 142:1995;2853-2860.
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Dartnell N, Flowers M, Greef R, Zhu J, Blackburn A. Reactive ion etching of silicon carbide. Vacuum. 46:1995;349-355.
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Polycrystalline silicon carbide for surface micromachining
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M. Allen, Reed M. IEEE Inc, Piscataway, NJ, The fabrication techniques and test results for the first surface micromachined, lateral moving SiC-based devices are presented
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Fleischman A, Roy S, Zorman C, Mehregany M, Matus L. Polycrystalline silicon carbide for surface micromachining. Allen M, Reed M. Proceedings of the 9th Annual International Workshop on Microelectromechanical Systems: 1996 Feb 11-15: San Diego, CA. 1996;234-238 IEEE Inc, Piscataway, NJ, The fabrication techniques and test results for the first surface micromachined, lateral moving SiC-based devices are presented.
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Proceedings of the 9th Annual International Workshop on Microelectromechanical Systems: 1996 Feb 11-15: San Diego, CA
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Fleischman, A.1
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XRD and XTEM investigation of polycrystalline silicon carbide on polysilicon
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Roy S, Zorman C, Wu C, Fleischman A, Mehregany M. XRD and XTEM investigation of polycrystalline silicon carbide on polysilicon. Mater Res Soc Symp Proc. 444:1997;81-86.
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Silicon carbide as a mechanical material
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Lundstrum L. Stockholm: Royal Swedish Academy of Engineering Sciences
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Kroetz G, Legner W, Wagner C, Moller H, Sonntag H, Muller G. Silicon carbide as a mechanical material. Lundstrum L. Technical Digest 8th International Conference on Solid-State Sensors and Actuators, and Eurosensors IX: 1995 June 25-29; Stockholm, Sweden. 1995;186-189 Royal Swedish Academy of Engineering Sciences, Stockholm.
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Kroetz, G.1
Legner, W.2
Wagner, C.3
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Sonntag, H.5
Muller, G.6
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18
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0039139694
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Investigation of structural, optical, and electrical properties of 3C-SiC deposited on SOI
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S. Nakashima, Matsunami H. Bristol: Institute of Physics
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Camassel J, Dezauzier C, DiCioccio L, Stoemenos J, Bluet J, Contreras S, Robert J, Billon T. Investigation of structural, optical, and electrical properties of 3C-SiC deposited on SOI. Nakashima S, Matsunami H. Silicon Carbide and Related Materials 1995. 1996;453-456 Institute of Physics, Bristol.
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Silicon Carbide and Related Materials 1995
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Camassel, J.1
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19
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0030673371
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A high temperature pressure sensor with β-SiC piezoresistors on SOI substrates
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K. Wise, Senturia S. IEEE Inc, Piscataway, NJ, A means of using 3C-SiC as a piezoresistive material for pressure sensing is presented. A pressure sensor was fabricated and high temperature data is presented
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Zeirmann R, von Berg J, Reichert W, Obermeier E, Eickhoff M, Kroetz G. A high temperature pressure sensor with β-SiC piezoresistors on SOI substrates. Wise K, Senturia S. Technical Digest-1997 International Conference on Solid-State Sensors and Actuators: 1997 June 16-19; Chicago, Il. 1997;1411-1414 IEEE Inc, Piscataway, NJ, A means of using 3C-SiC as a piezoresistive material for pressure sensing is presented. A pressure sensor was fabricated and high temperature data is presented.
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Technical Digest-1997 International Conference on Solid-State Sensors and Actuators: 1997 June 16-19; Chicago, Il
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Zeirmann, R.1
Von Berg, J.2
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Obermeier, E.4
Eickhoff, M.5
Kroetz, G.6
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Tong Q, Gosele U, Yuan C, Steckl A, Reiche M. Silicon carbide wafer bonding. J Electrochem Soc. 142:1995;232-236.
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J Electrochem Soc
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Tong, Q.1
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21
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0030650746
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A novel SiC on insulator technology using wafer bonding
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K. Wise, Senturia S. IEEE Inc, Piscataway, NJ, An improved wafer bonding technique for making an SiC on insulator structure is presented. The areal yield is very high. SiC films grown on this structure have a lower defect density than conventional 3C-SiC grown on Si
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Vinod K, Zorman C, Mehregany M. A novel SiC on insulator technology using wafer bonding. Wise K, Senturia S. Technical Digest - 1997 International Conference on Solid-State Sensors and Actuators: 1997 June 16-19; Chicago, Il. 1997;653-656 IEEE Inc, Piscataway, NJ, An improved wafer bonding technique for making an SiC on insulator structure is presented. The areal yield is very high. SiC films grown on this structure have a lower defect density than conventional 3C-SiC grown on Si.
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Technical Digest - 1997 International Conference on Solid-State Sensors and Actuators: 1997 June 16-19; Chicago, Il
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Vinod, K.1
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Mehregany, M.3
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22
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0039732078
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Preparation of SiC thin film thermistor by hot wall epitaxy
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S. Nakashima, Matsunami H. Bristol: Institute of Physics
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Muramatsu K, Sakamoto T, Asakura M, Hasegawa K, Yamada N, Nakashima S, Ishida A, Kuwabura H, Nakanishi Y, Fujiyasu H. Preparation of SiC thin film thermistor by hot wall epitaxy. Nakashima S, Matsunami H. Silicon Carbide and Related Materials 1995. 1996;821-824 Institute of Physics, Bristol.
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Silicon Carbide and Related Materials 1995
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Muramatsu, K.1
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Nakanishi, Y.9
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23
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0039732139
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Preparation of polycrystalline SiC thin films and its application to resistive sensors
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S. Nakashima, Matsunami H. Bristol: Institute of Physics
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Kamimura K, Miwa T, Sugiyama T, Ogawa T, Nakao M, Onuma Y. Preparation of polycrystalline SiC thin films and its application to resistive sensors. Nakashima S, Matsunami H. Silicon Carbide and Related Materials 1995. 1996;825-828 Institute of Physics, Bristol.
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Silicon Carbide and Related Materials 1995
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Kamimura, K.1
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24
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0029770937
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6H-SiC pressure sensors for high temperature applications
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M. Allen, Reed M. Piscataway, NJ: IEEE Inc
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Okojie R, Ned A, Kurtz A, Carr W. 6H-SiC pressure sensors for high temperature applications. Allen M, Reed M. Proceedings of the 9th Annual International Workshop on Microelectromechanical Systems: 1996 Feb 11-15; San Diego, CA. 1996;146-149 IEEE Inc, Piscataway, NJ.
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Okojie, R.1
Ned, A.2
Kurtz, A.3
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25
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85033091679
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Operation of 6H-SiC pressure sensor at 500°C
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K. Wise, Senturia S. IEEE Inc, Piscataway, NJ, The first all single crystal SiC pressure sensor
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Okojie R, Ned A, Kurtz A. Operation of 6H-SiC pressure sensor at 500°C. Wise K, Senturia S. Technical Digest - 1997 International Conference on Solid-State Sensors and Actuators: 1997 June 16-19, Chicago, Il. 1997;14071-14079 IEEE Inc, Piscataway, NJ, The first all single crystal SiC pressure sensor.
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Technical Digest - 1997 International Conference on Solid-State Sensors and Actuators: 1997 June 16-19, Chicago, Il
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Okojie, R.1
Ned, A.2
Kurtz, A.3
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27
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0000374070
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Silicon carbide-based detection of hydrogen and hydrocarbons
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Nakashima S. Bristol: Institute of Physics
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Hunter G, Neudeck P, Chen L, Knight D, Liu C, Wu Q, Matsunami H. Silicon carbide-based detection of hydrogen and hydrocarbons. Nakashima S. Silicon Carbide and Related Materials 1995. 1996;817-820 Institute of Physics, Bristol.
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28
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0030647233
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High temperature semiconductor sensor for the detection of fluorine
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K. Wise, Senturia S. Piscataway, NJ: IEEE Inc
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Moritz W, Fillipov V, Bartholomaus L, Terentjev A, Gabusjan T, Vasiliev A, Yakimov S. High temperature semiconductor sensor for the detection of fluorine. Wise K, Senturia S. Technical Digest - 1997 International Conference on Solid-State Sensors and Actuators: 1997 June 16-19; Chicago, Il. 1997;1073-1076 IEEE Inc, Piscataway, NJ.
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Technical Digest - 1997 International Conference on Solid-State Sensors and Actuators: 1997 June 16-19; Chicago, Il
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Moritz, W.1
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Bartholomaus, L.3
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29
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3C-SiC coating of silicon micromachined atomizers
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S. Kazuo, Shoji S. IEEE Inc, Piscataway, NJ, A straightforward application of SiC which takes advantage of the erosion resistance of SiC to coat Si devices designed for harsh environments
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Rajan N, Zorman C, Mehregany M, DeAnna R, Harvey R. 3C-SiC coating of silicon micromachined atomizers. Kazuo S, Shoji S. Proceedings of the 10th Annual International Workshop on Microelectromechanical Systems: 1997 Jan 26-30; Nagoya, Japan. 1997;165-168 IEEE Inc, Piscataway, NJ, A straightforward application of SiC which takes advantage of the erosion resistance of SiC to coat Si devices designed for harsh environments.
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Proceedings of the 10th Annual International Workshop on Microelectromechanical Systems: 1997 Jan 26-30; Nagoya, Japan
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Rajan, N.1
Zorman, C.2
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30
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PECVD silicon carbide for micromachined transducers
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K. Wise, Senturia S. Piscataway, NJ: IEEE Inc
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Flannery A, Mourlas N, Storment C, Tsai S, Tan S, Kovacs G. PECVD silicon carbide for micromachined transducers. Wise K, Senturia S. Technical Digest - 1997 International Conference on Solid-State Sensors and Actuators: June 16-19: Chicago, Il. 1997;217-220 IEEE Inc, Piscataway, NJ.
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Technical Digest - 1997 International Conference on Solid-State Sensors and Actuators: June 16-19: Chicago, Il
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Flannery, A.1
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Storment, C.3
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Recent progress in thin film shape memory microactuators
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M. Elwenspoek, de Rooij N. Piscataway, NJ: IEEE Inc
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Johnson A, Shahoian E. Recent progress in thin film shape memory microactuators. Elwenspoek M, de Rooij N. Proceedings of the 8th Annual International Workshop on Microelectromechanical Systems: 1995 Jan; Amsterdam, Netherlands. 1995;216-220 IEEE Inc, Piscataway, NJ.
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Stress-optimised shape memory microvalves
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S. Kazuo, Shoji S. IEEE Inc, Piscataway, NJ, Actual experimental results for shape memory actuated MEMS are presented. See also [33-35]
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Skrobanek K, Kohl M, Miyazaki S. Stress-optimised shape memory microvalves. Kazuo S, Shoji S. Proceedings of the 10th Annual International Workshop on Microelectromechanical Systems: 1997 Jan 26-30; Nagoya, Japan. 1997;256-261 IEEE Inc, Piscataway, NJ, Actual experimental results for shape memory actuated MEMS are presented. See also [33-35].
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Proceedings of the 10th Annual International Workshop on Microelectromechanical Systems: 1997 Jan 26-30; Nagoya, Japan
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Skrobanek, K.1
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Active endoscope with SMA (shape memory alloy) coil springs
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M. Allen, Reed M. Piscataway, NJ: IEEE Inc
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Maeda S, Abe K, Yamamoto K, Tohyama O, Ito H. Active endoscope with SMA (shape memory alloy) coil springs. Allen M, Reed M. Proceedings of the 9th Annual International Workshop on Microelectromechanical Systems: 1996 Feb 11-15; San Diego, CA. 1996;290-295 IEEE Inc, Piscataway, NJ.
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Liu C, Shirashi H, Kikuchi Y, Yanagisawa M. Effectiveness of a thermal shape-memory patent ductus arteriosus occlusion coil. Am Heart J. 131:1996;1018-1023.
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Duerig T. Present and future applications of shape memory and superelastic materials. Mater Res Soc Symp Proc. 360:1995;497-506.
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A practical microgripper by fine alignment, eutectic bonding and SMA actuation
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Lee A, Ciarlo D, Krulevitch P, Lehew S, Trevino J, Northrup M. A practical microgripper by fine alignment, eutectic bonding and SMA actuation. Sensor Actuator A-Phys. 54:1996;755-759.
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0030420886
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Thin film shape memory alloy microactuators
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A good review of shape memory actuators, including a small introduction, mechanical properties results, a comparison with other actuation mechanisms, and a discussion of some previously reported devices.
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Krulevitch P, Lee A, Ramsey P, Trevino J, Hamilton J, Northrup M. Thin film shape memory alloy microactuators. J Microelectromechanical Syst. 5:1996;270-282 A good review of shape memory actuators, including a small introduction, mechanical properties results, a comparison with other actuation mechanisms, and a discussion of some previously reported devices.
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J Microelectromechanical Syst
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Thermo-mechanical Ni50Ti50/Si composite thin film switch
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Kim T, Su Q, Wuttig M. Thermo-mechanical Ni50Ti50/Si composite thin film switch. Mater Res Soc Symp Proc. 360:1995;375-380.
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Structure and thermal stability in titanium-nickel thin films sputtered at elevated-temperature on inorganic and polymeric substrates
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Hou L, Pence T, Grummon D. Structure and thermal stability in titanium-nickel thin films sputtered at elevated-temperature on inorganic and polymeric substrates. Mater Res Soc Symp Proc. 360:1995;369-374.
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Kohl M, Skrobanek K, Quandt E, Schlossmacher P, Allen M. Development of microactuators based on the shape memory effect. J Physique IV. 5:1995;C8-1187-C8-1192.
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0030651812
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