InP-based strained In0.8Ga0.2As/AlAs resonant tunneling diodes with high peak-current density and large peak-to-valley current ratio grown by metal-organic vapor-phase epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 211-214

  Sugiyama, Hiroki ^a   Matsuzaki, Hideaki ^a   Oda, Yasuhiro ^a   Yokoyama, Haruki ^a   Enoki, Takatomo ^a   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIODES; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; RESONANT TUNNELING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; VOLTAGE MEASUREMENT; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM ARSENIDE; INDIUM; INDIUM PHOSPHIDE; MODFETS; MOLECULAR BEAMS; ORGANOMETALLICS; TEMPERATURE; TUNNEL DIODES; VAPOR PHASE EPITAXY;

ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; THICK BARRIERS;

HETEROJUNCTIONS; RESONANT TUNNELING DIODES;

HEMTS; INDIUM GALLIUM ARSENIDE; LOW VOLTAGES; MOLECULAR BEAM EPITAXIAL GROWTH; RESONANT TUNNELING DEVICE;

EID: 0038825215     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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