Monolithic integration of resonant tunneling diodes, Schottky barrier diodes and 0.1-μm-gate high electron mobility transistors for high-speed ICs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2186-2190

  Matsuzaki, Hideaki ^a   Osaka, Jiro ^a   Itoh, Toshihiro ^a   Sano, Kimikazu ^b   Murata, Koichi ^b  

^a NTT CORPORATION   (Japan)

^b NTT Network Innovation Laboratories   (Japan)

Author keywords

HEMT; InP; MBE; MOCVD; Monolithic integration; Regrowth; Resonant tunneling diode

Indexed keywords

ANALOG TO DIGITAL CONVERSION; EPITAXIAL GROWTH; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; RESONANT TUNNELING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TUNNEL DIODES;

RESONANT TUNNELING DIODES;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0035301980     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2186     Document Type: Article

References (10)