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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1204-1207

Highly uniform regrown in0.53Ga0.47As/AlAs/InAs resonant tunneling diodes on in0.53Ga0.47As

(4) Osaka, Jiro a Maezawa, Koichi a,b Yokoyama, Haruki a Yamamoto, Masafumi a

Author keywords

High electron mobility transistor; InGaAs; InP; Molecular beam epitaxy; Monolithic integration; Native oxide; Regrowth; Resonant tunneling diode

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; EPITAXIAL GROWTH; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

MONOLITHIC INTEGRATION; NATIVE OXIDE; REGROWTH; RESONANT TUNNELING DIODE;

TUNNEL DIODES;

EID: 0032632375 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1204 Document Type: Article

Times cited : (9)

References (9)

1
- 0031222634
- K. Maezawa, H. Matsuzaki, K. Arai, T. Otsuji and M. Yamamoto: Electron. Lett. 33 (1997) 1733.
- (1997) Electron. Lett. , vol.33 , pp. 1733
- Maezawa, K.¹ Matsuzaki, H.² Arai, K.³ Otsuji, T.⁴ Yamamoto, M.⁵

2
- 0031356992
- A. Seabaugh, B. Brar, T. Broekaert, G. Frazier, F. Morris, P. van der Wagt and E. Beam III: 19th GaAs IC Symp. Tech. Dig. 1997, p. 119.
- (1997) 19th GaAs IC Symp. Tech. Dig. , pp. 119
- Seabaugh, A.¹ Brar, B.² Broekaert, T.³ Frazier, G.⁴ Morris, F.⁵ Van Der Wagt, P.⁶ Beam III, E.⁷

3
- 0031676207
- K. Sano, K. Murata, T. Akeyoshi, N. Shimizu, T. Otsuji, M. Yamamoto, T. Ishibashi and E. Sano: Electron. Lett. 34 (1998) 215.
- (1998) Electron. Lett. , vol.34 , pp. 215
- Sano, K.¹ Murata, K.² Akeyoshi, T.³ Shimizu, N.⁴ Otsuji, T.⁵ Yamamoto, M.⁶ Ishibashi, T.⁷ Sano, E.⁸

4
- 0004332633
- A. Hase, R. Gibis, H. Kunzel and U. Griebenow: Appl. Phys. Lett. 65 (1994) 1406.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1406
- Hase, A.¹ Gibis, R.² Kunzel, H.³ Griebenow, U.⁴

5
- 0030687289
- J. Cowles, R. Lai, L. Tran, H. Wang, Y. C. Chen, K. Kobayashi, T. Block, H. C. Yen, P. Liu, A. Oki and D. Streit: Proc. 9 th Int. Conf. Indium Phosphide and Related Materials, 1997, p. 625.
- (1997) Proc. 9 Th Int. Conf. Indium Phosphide and Related Materials , pp. 625
- Cowles, J.¹ Lai, R.² Tran, L.³ Wang, H.⁴ Chen, Y.C.⁵ Kobayashi, K.⁶ Block, T.⁷ Yen, H.C.⁸ Liu, P.⁹ Oki, A.¹⁰ Streit, D.¹¹

6
- 33645040584
- W. Schlaak, W. Passenbrg, C. Schramm, G. G. Mekonnen, A. Umback, W. Ebert and H.-G. Bach: Proc. 8 th Int. Conf. Indium Phosphide and Related Materials, 1996, p. 259.
- (1996) Proc. 8 Th Int. Conf. Indium Phosphide and Related Materials , pp. 259
- Schlaak, W.¹ Passenbrg, W.² Schramm, C.³ Mekonnen, G.G.⁴ Umback, A.⁵ Ebert, W.⁶ Bach, H.-G.⁷

7
- 0030419880
- S. van Waasen, A. Umbach, U. Auer, H.-G. Bach, R. M. Bertenburg, G. Janssen, G. G. Mekonnen, W. Passenbrg, R. Reuter, W. Schlaak, C. Schramm, G. Unterborsh, P. Wolfram and F. J. Tegude: 18th GaAs IC Symp. Tech. Dig. 1996, p. 258.
- (1996) 18th GaAs IC Symp. Tech. Dig. , pp. 258
- Van Waasen, S.¹ Umbach, A.² Auer, U.³ Bach, H.-G.⁴ Bertenburg, R.M.⁵ Janssen, G.⁶ Mekonnen, G.G.⁷ Passenbrg, W.⁸ Reuter, R.⁹ Schlaak, W.¹⁰ Schramm, C.¹¹ Unterborsh, G.¹² Wolfram, P.¹³ Tegude, F.J.¹⁴

8
- 0032300414
- Tsukuba
- K. Maezawa, H. Matsuzaki, J. Osaka, H. Yokoyama, M. Yamamoto and T. Otsuji: Proc. 10 th Int. Conf. on Indium Phosphide and Related Materials, Tsukuba, 1998, p. 415.
- (1998) Proc. 10 Th Int. Conf. on Indium Phosphide and Related Materials , pp. 415
- Maezawa, K.¹ Matsuzaki, H.² Osaka, J.³ Yokoyama, H.⁴ Yamamoto, M.⁵ Otsuji, T.⁶

9
- 0026413127
- T. Suzuki and T. Nishinaga: J. Cryst. Growth 111 (1991) 173.
- (1991) J. Cryst. Growth , vol.111 , pp. 173
- Suzuki, T.¹ Nishinaga, T.²

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