Uniformity of the high electron mobility transistors and resonant tunneling diodes integrated on an InP substrate using an epitaxial structure grown by molecular beam epitaxy and metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5500-5502

  Maezawa, Koichi ^a,b   Osaka, Jiro ^a   Yokoyama, Haruki ^a   Yamamoto, Masafumi ^a  

^a NTT CORPORATION   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

HEMT; InAIAs; InGaAs; InP; MBE; MOCVD; Resonant tunneling diode

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; TUNNEL DIODES;

RESONANT TUNNELING DIODES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032179665     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5500     Document Type: Article

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