Coulomb gap of coupled quantum dots with adjustable interdot tunneling

Surface Science

Volumn 361-362, Issue , 1996, Pages 631-635

  Crouch, Catherine H ^a   Livermore, C ^a   Waugh, F R ^a,c   Westervelt, R M ^a   Campman, K L ^b   Gossard, A C ^b  

^a HARVARD UNIVERSITY   (United States)

^b University of California at Santa Barbara   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Aluminum gallium arsenide; Coulomb blockade; Electrical transport measurements; Gallium arsenide; Semiconductor quantum dot

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HETEROJUNCTIONS; MAGNETIC FIELDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

ALUMINUM GALLIUM ARSENIDE; COULOMB GAP; ELECTRICAL TRANSPORT MEASUREMENT; INTERDOT TUNNELING; MANY BODY CHARGED FLUCTUATIONS;

ELECTRON TUNNELING;

EID: 17144448526     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00487-6     Document Type: Article

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14. gap in the text.