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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 8, 2001, Pages 853281-853288

Ga segregation in MnSb epitaxial growth on GaAs (100) and (111) B substrates

(4) Ono, Kanta a Shuzo, Masaki a Oshima, Masaharu a Akinaga, Hiro b

a UNIVERSITY OF TOKYO (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY DERIVATIVE; ARSENIC DERIVATIVE; GALLIUM; MANGANESE DERIVATIVE; SURFACTANT;

ARTICLE; ENERGY; FILM; GROWTH; SEMICONDUCTOR; SPECTROSCOPY; SURFACE PROPERTY; SYNCHROTRON; THICKNESS;

EID: 0035880801 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (13)

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