Compensation for transient chamber wall condition using real-time plasma density feedback control in an inductively coupled plasma etcher

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 3, 2003, Pages 706-717

  Klimecky, Pete I ^a   Grizzle, J W ^a   Terry Jr , Fred L ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTUATORS; ALGORITHMS; CHLORINATION; CLEANING; ELECTRONIC DENSITY OF STATES; FEEDBACK CONTROL; PLASMA DENSITY; PLASMA ETCHING; POLYSILICON; REACTIVE ION ETCHING; SILICON WAFERS; TWO TERM CONTROL SYSTEMS;

INDUCTIVELY COUPLED PLASMA ETCHER; MICROWAVE RESONANCE CAVITY TECHNIQUE; OXIDE HARDMASK; REAL-TIME PLASMA DENSITY FEEDBACK CONTROL; TRANSFORMER COUPLED PLASMA; TRANSIENT CHAMBER WALL;

INDUCTIVELY COUPLED PLASMA;

EID: 0038613434     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1569921     Document Type: Article

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