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Volumn 42, Issue 4 A, 2003, Pages 1751-1752

Measurement of cross-sectional potential of InAlAs/InGaAs layered structures in vacuum by Kelvin probe force microscopy

Author keywords

AnAlAs InGaAs layered structures; Cross sectional potential image; Kelvin probe force microscopy; Spatial resolution; Vacuum condition

Indexed keywords

MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; VACUUM APPLICATIONS;

EID: 0038608143     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1751     Document Type: Article
Times cited : (2)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.