|
Volumn 42, Issue 4 A, 2003, Pages 1751-1752
|
Measurement of cross-sectional potential of InAlAs/InGaAs layered structures in vacuum by Kelvin probe force microscopy
|
Author keywords
AnAlAs InGaAs layered structures; Cross sectional potential image; Kelvin probe force microscopy; Spatial resolution; Vacuum condition
|
Indexed keywords
MICROSCOPIC EXAMINATION;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE STRUCTURES;
SUBSTRATES;
VACUUM APPLICATIONS;
CROSS-SECTIONAL POTENTIAL;
INDIUM ALUMINUM ARSENIDE;
KELVIN PROBE FORCE MICROSCOPY;
SPATIAL RESOLUTION;
VACUUM CONDITION;
HETEROJUNCTIONS;
|
EID: 0038608143
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.42.1751 Document Type: Article |
Times cited : (2)
|
References (12)
|