Amorphous structures of silicon carbonitride formed by high-dose nitrogen ion implantation into silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 994-998

  Ishimaru, Manabu ^a   Naito, Muneyuki ^a   Hirotsu, Yoshihiko ^a   Sickafus, Kurt E ^b  

^a OSAKA UNIVERSITY   (Japan)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Amorphous; Nano beam electron diffraction; Phase decomposition; Radial distribution function; Silicon carbonitride

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL ORIENTATION; DECOMPOSITION; ELECTRON DIFFRACTION; ION IMPLANTATION; NITROGEN; PHASE TRANSITIONS; RAPID THERMAL ANNEALING; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

PHASE DECOMPOSITION;

SILICON CARBIDE;

EID: 0038581172     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00909-1     Document Type: Conference Paper

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