Enhanced surface hardness in nitrogen-implanted silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 693-697

  Uslu, C ^a   Lee, D H ^a   Berta, Y ^a   Park, B ^a   Poker, D B ^b   Riester, L ^b  

^a Georgia Institute of Technology   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; HARDNESS; NITROGEN; PARTICLE DETECTORS; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CARBON SILICON NITRIDE FORMATION; DOSE RATE; ION ENERGY; METASTABLE PHASE; POSITION SENSITIVE DETECTOR; SUBSTRATE TEMPERATURE;

ION IMPLANTATION;

EID: 0030565071     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01482-9     Document Type: Article

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