Ohmic contacts to p-type SiC with improved thermal stability

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 791-794

  Liu, S ^a   Scofield, J D ^b  

^a UNIVERSITY OF DAYTON   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Contact Resistivity; Ohmic Contact; Thermal Stability

Indexed keywords

ALUMINA; ALUMINUM ALLOYS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; METAL INSULATOR BOUNDARIES; METALLIZING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TUNGSTEN;

DEPTH PROFILING;

OHMIC CONTACTS;

EID: 0031701661     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.791     Document Type: Article

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