Surface acoustic wave bandpass filters properties of AlN thin films sputtered on LiNbO3 substrates

IEEE International Symposium on Applications of Ferroelectrics

Volumn , Issue , 2002, Pages 403-406

  Kao, Kuo Sheng ^a   Cheng, Chien Chuan ^b   Chen, Ying Chung ^a   Chen, Chien Hsing ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b DE LIN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC SURFACE WAVE FILTERS; ALUMINUM NITRIDE; BANDPASS FILTERS; LITHIUM COMPOUNDS; MAGNETRON SPUTTERING; SUBSTRATES;

CENTER FREQUENCY;

THIN FILMS;

EID: 0038411471     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. K. M. Lakin, G. R. Kline and K. T. McCarron, "High-Q microwave acoustic resonators and filters" IEEE Trans. Microwave Theory and Techniques, vol. 41, pp.2139-2146, 1993.
2. 3 Substrates," Jpn. J. Appl. Phys., vol. 34, pp. 2664-2667, 1995.
3. K. Tsubouchi, and N. Mikoshiba, "Zero-temperature-coefficient SAW devices on AlN epitaxial films," IEEE Trans. Son. and Ultrason., vol. SU-32, pp. 634-644, 1985.
4. E. A. Chowdhury, J. Kolodzey, J. O. Olowolafe, G. Qiu, G. Katulka, D. Hits, M. Dashiell, D. van der Weide, C. P. Swann and K. M. Unruh, "Thermal oxidized AlN thin films for devices insulators," Appl. Phys. Lett., vol. 70, pp. 2732-2734, 1997.
5. 3 system," Jpn. J. Appl. Phys., vol. 36, pp. 2837-2842, 1997.
6. E. Calleja, M. A. Sánchez-García, E. Monroy, F. J. Sánchez, E. Muñoz, A. Sanz-Hervás, C. Villar, and M. Aguilar, "Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy," J. Appl. Phys., vol. 82, pp. 4681-4683, 1997.
7. R. D. Vispute, Hong Wu, and J. Narayan, "High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition," Appl. Phys. Lett., vol. 67, pp. 1549-1551, 1995.
8. E. Rille, R. Zarwasch, and H. K. Pulker, "Properties of reactively d.c.-magnetron-sputtered AlN thin films," Thin Solid Films, vol. 228, pp. 215-217, 1993.
9. H. M. Liaw, and F. S. Hickernell, "The characterization of sputtered polycrystalline aluminum nitride on silicon by surface acoustic wave measurements," IEEE Trans. Ultrason. Ferroelectr. & Freq. Control, vol. 42, pp. 404-409, 1995.
10. D. Liufu, and K. C. Kao, "Piezoelectric, dielectric, and interfacial properties of aluminum nitride films," J. Vac. Sci. Technol, vol. A16, pp. 2360-2366, 1998.
11. S. Uchiyama, Y. Ishigami, M. Ohta, M. Niigaki, H. Kan, Y. Nakanishi, and T. Yamaguchi, "Growth of AlN films by magnetron sputtering," J. Cryst. Growth, vol. 189/190, pp. 448-451, 1998.
12. M. Akiyama, C. N. Xu, K. Nonaka, K. Shobu, and T. Watanabe, "Statistical approach for optimizing sputtering conditions of highly oriented aluminum nitride thin films," Thin Solid Films, vol. 315, pp. 62-65, 1998.
13. C. C. Cheng, Y. C. Chen, R. C. Horng, H. J. Wang, W. R. Chen, and E. K. Lai, "Growth of c-axis oriented aluminum nitride films on GaAs substrates by reactive rf magnetron sputtering," J. Vac. Sci. Technol., vol. A16, pp. 3335-3340, 1998.
14. 3 substrates for surface acoustic wave devices," Proc. of the 12th IEEE Intl. Symp. on Applications of Ferroelectrics, vol. 1, pp. 439-442, 2000.
15. 3," Thin Solid Films, vol. 360, pp.274-277, 2000.
16. 3 substrates," IEEE Trans. Ultrason. Ferroelectr. & Freq. Control, vol. 49, pp. 345-349, 2002.