Highly c-axis oriented AlN films deposited on LiNbO3 substrates for surface acoustic wave devices

IEEE International Symposium on Applications of Ferroelectrics

Volumn 1, Issue , 2000, Pages 439-442

  Cheng, Chien Chuan ^a   Kao, Kuo Sheng ^a   Chen, Ying Chung ^a  

^a Sze Hai Institute of Technology and Commerce   (Taiwan)

Author keywords

AlN; Electromechanical coupling coefficient; LiNbO3; rf Magnetron sputtering; Scanning electron microscopy; Surface acoustic wave; X ray diffraction

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; CRYSTAL ORIENTATION; FILM GROWTH; LITHIUM NIOBATE; MAGNETRON SPUTTERING; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; TEMPERATURE MEASUREMENT; TEXTURES; X RAY DIFFRACTION ANALYSIS;

COLUMNAR STRUCTURE; ELECTROMECHANICAL COUPLING COEFFICIENT; PHASE VELOCITY; SPUTTERING PRESSURE; SUBSTRATE TEMPERATURE;

ALUMINUM NITRIDE;

EID: 0034470534     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Zero-temperature-coefficient SAW devices on AlN epitaxial films
2. 3 system
3. Growth of aluminum nitride films on silicon by electron-cyclotron-resonance-assisted molecular beam epitaxy
4. Characteristics of AlN thin films deposited by electron cyclotron resonance dual-ion-beam sputtering and their application to GHz-band surface acoustic wave devices
5. Preparation of aluminum nitride thin films by reactive sputtering and their applications to GHz-band surface acoustic wave devices
6. Morphology and structure of aluminum nitride thin films on glass substrates
7. Growth of c-axis oriented aluminum nitride films on GaAs substrates by reactive rf magnetron sputtering
8. Control of preferential orientation of AlN films prepared by the reactive sputtering method