Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 3 A, 2003, Pages

  Kutsukake, Kentaro ^a   Usami, Noritaka ^a   Fujiwara, Kozo ^a   Ujihara, Toru ^a   Sazaki, Gen ^a   Zhang, Baoping ^b   Segawa, Yusaburo ^b   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b RIKEN   (Japan)

Author keywords

Phase diagram; RTA; SGOI; SiGe; SOI

Indexed keywords

ELECTRIC INSULATORS; GERMANIUM; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; PHASE DIAGRAMS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SPUTTERING; SUBSTRATES; THERMAL DIFFUSION IN SOLIDS; THIN FILMS;

RADIO FREQUENCY SPUTTERING; SILICON GERMANIDE; SILICON GERMANIDE ON INSULATOR; SILICON ON INSULATORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0038398934     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l232     Document Type: Letter

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